IS43LR16640C datasheet(39/47 Pages) ISSI

Nome de Peças	IS43LR16640C

Descrição Electrónicos	1Gb (x16, x32) Mobile DDR SDRAM

PDF	47 Pages

Scroll/Zoom	100%

Fabricante Electrônico	ISSI [Integrated Silicon Solution, Inc]

Página de início	http://www.issi.com

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39 / 47 page

Rev. 0A | October 2022

www.issi.com - dram@issi.com

IS43/46LR32320C

IS43/46LR16640C

Figure28 : Write to Precharge (Uninterrupting)

Figure29 : Write to Precharge (Interrupting)

Notes:

1. Din n = Data-In from Column n.

2. tWR is referenced from the first positive CK edge after the last data-in pair.

3. Read and Write command can be directed to different banks, in which case tWR is not required and the Read command

could be applied ealier.

Notes:

1. Din n = Data-In from Column n.

2. tWR is referenced from the first positive CK edge after the last data-in pair.

3. Read and Write command can be directed to different banks, in which case tWR is not required and the Read command

could be applied ealier.

PCG

NOP

WRITE

NOP

Bank a

COL n

Address

/CLK

CLK

DQS

tDQSS

(NOM)

Command

DIN

n+1

DIN

n+2

DIN

n+3

Don’t care

tWR

NOP

WRITE

NOP

PCG

NOP

Bank a

COL n

Address

/CLK

CLK

DQS

tDQSS

(NOM)

Command

DIN

n+1

tWR

Don’ t care

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