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IS43LR16640C Folha de dados (PDF) - Integrated Silicon Solution, Inc

IS43LR16640C Datasheet PDF - Integrated Silicon Solution, Inc
Nome de Peças IS43LR16640C
Download  IS43LR16640C Download
Tamanho do Arquivo   1952.51 Kbytes
página   47 Pages
Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Descrição Electrónicos 1Gb (x16, x32) Mobile DDR SDRAM

IS43LR16640C Datasheet (PDF)

Go To PDF Page Download Folha de dados
IS43LR16640C Datasheet PDF - Integrated Silicon Solution, Inc

Nome de Peças IS43LR16640C
Download  IS43LR16640C Click to download

Tamanho do Arquivo   1952.51 Kbytes
página   47 Pages
Fabricante Electrônico  ISSI [Integrated Silicon Solution, Inc]
Página de início  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc
Descrição Electrónicos 1Gb (x16, x32) Mobile DDR SDRAM

IS43LR16640C Folha de dados (HTML) - Integrated Silicon Solution, Inc


IS43LR16640C Detalhes do produto

Features
• JEDEC standard 1.8V power supply.
• VDD = 1.8V, VDDQ = 1.8V
• Four internal banks for concurrent operation
• MRS cycle with address key programs
-CAS latency 2, 3 (clock)
-Burst length (2, 4, 8, 16)
-Burst type (sequential & interleave)
• Fully differential clock inputs (CK, /CK)
• All inputs except data & DM are sampled at the rising
edge of the system clock
• Data I/O transaction on both edges of data strobe
• Bidirectional data strobe per byte of data (DQS)
• DM for write masking only
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• 64ms refresh period (8K cycle)
• Auto & self refresh
• Concurrent Auto Precharge
• Maximum clock frequency up to 208MHZ
• Maximum data rate up to 416Mbps/pin
• Power Saving support
-PASR (Partial Array Self Refresh)
-Auto TCSR (Temperature Compensated Self Refresh)
-Deep Power Down Mode
-Programmable Driver Strength Controlby Full Strength or 1/2, 1/4, 1/8 or 3/4 of Full Strength
• Status Register Read (SRR)
• LVCMOS compatible inputs/outputs
• Operation Temperature:
-Commercial(TA= 0 ~ 70 °C )
-Industrial(TA= -40 ~ 85 °C )
-Automotive, A1(TA= -40 ~ 85 °C )
-Automotive, A2(TA= -40 ~ 105 °C )




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Sobre a Integrated Silicon Solution, Inc


Integrated Silicon Solution, Inc. (ISSI) is a fabless semiconductor company that designs and markets high-performance integrated circuits (ICs) for the automotive, industrial, medical, and communications markets. The company was founded in 1988 and is headquartered in Milpitas, California, USA.

ISSI's product portfolio includes static random access memory (SRAM), dynamic random access memory (DRAM), and analog and mixed-signal ICs. The company specializes in low-power, high-speed SRAMs, and is a leading supplier of DRAMs to the automotive market.

In 2015, ISSI was acquired by China's Uphill Investment Co., Ltd. and became a wholly-owned subsidiary of Uphill Investment.

*Esta informação é apenas para fins informativos gerais, não seremos responsáveis por qualquer perda ou dano causado pelas informações acima.




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