Copyright 2024 RAMXEED LIMITED

DS501-00078-1v1-E

Fujitsu Semiconductor Memory Solutions Limited has changed its name to RAMXEED Limited.

RAMXEED Limited will continue to offer and support existing products while maintaining Fujitsu's part number

unchanged.

Memory FeRAM

4 M (256 K × 16) Bit

MS85R4M2TA

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DESCRIPTIONS

The MS85R4M2TA is an FeRAM (Ferroelectric Random Access Memory) chip consisting of 262,144

words × 16 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

process technologies.

The MS85R4M2TA is able to retain data without using a back-up battery, as is needed for SRAM.

The memory cells used in the MS85R4M2TA can be used for 1014 read/write operations, which is a

significant improvement over the number of read and write operations supported by Flash memory and

E2PROM. The MS85R4M2TA uses a pseudo-SRAM interface.



FEATURES

• Bit configuration

: 262,144 words × 16 bits

• LB and UB data byte control

: Available Configuration of 524,288 words × 8 bits

• Read/write endurance

: 1014 times ( + 85 °C), 1013 times ( + 105 °C),

• Data retention

: 10 years ( + 105 °C), 40 years ( + 85 °C), over 200 years ( + 35 °C)

• Operating power supply voltage

: 1.8 V to 3.6 V

• Low power operation

: Operating power supply current 16 mA (Max)

Standby current 150 μA (Max)

Sleep current 12 μA (Max)

• Operation ambient temperature range : − 40 °C to + 105 °C

• Package

: 44-pin plastic TSOP

RoHS compliant