DALC208SC6 datasheet(2/10 Pages) STMICROELECTRONICS

2 / 10 page

Symbol

Parameter

Value

Unit

VPP

IEC1000-4-2, air discharge

IEC1000-4-2, contact discharge

VRRM

Peak reverse voltage per diode

∆VREF

Reference voltage gap between VREF2 and VREF1

VIn max.

Maximum operating signal input voltage

VREF2

VIn min.

Minimum operating signal input voltage

VREF1

Continuous forward current (single diode loaded)

200

IFRM

Repetitive peak forward current (tp = 5

µs, F = 50 kHz)

700

IFSM

Surge non repetitive forward current -

rectangular waveform (see curve on figure 1)

tp = 2.5

µs

tp = 1 ms

tp = 100 ms

Tstg

Storage temperature range

Maximum junction temperature

-55 to + 150

150

°C

ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C).

Symbol

Parameter

Conditions

Typ.

Max.

Unit

Forward voltage

IF = 50 mA

1.2

Reverse leakage current per diode

VR = 5 V

µA

Input capacitance between Line and GND

see note 3

Note 2: The dynamical behavior is described in the Technical Information section, on page 4.

ELECTRICAL CHARACTERISTICS (Tamb = 25°C).

REF1

I/O

+V CC

REF1 connected to GND

REF2 connected to +Vcc

Input applied :

Vcc = 5V, Vsign = 30 mV, F = 1 MHz

REF2

Note 3: Input capacitance measurement

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient (note 1)

500

°C/W

Note 1: device mounted on FR4 PCB with recommended footprint dimensions.

THERMAL RESISTANCE

DALC208SC6

2/10

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