MB85RS4MTY datasheet(18/32 Pages) RAMXEED

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MB85RS4MTY(AEC-Q100 Compliant)

DS501-00066-3v0-E



ELECTRICAL CHARACTERISTICS

1. DC Characteristics

(within recommended operating conditions)

*1 : Applicable pin : CS, WP, SCK, SI

*2 : Applicable pin : SO

*3 : Input voltage magnitude : VDD  0.2 V or VSS

Parameter

Symbol

Condition

Value

Unit

Min

Typ

Max

Input leakage current*1

|ILI|

CS  VDD

25 C





125 C



WP, SCK,CS

SI  0 V to VDD

25 C



125 C



Output leakage current*2

|ILO|

SO  0 V to VDD

25 C





125 C



Operating power supply

current*3

IDD

SCK  50MHz



3.5

Standby current

ISB

SCK  SI  CS 

WP  VDD



11.0

350



Hibernate current

IZZHIB

CS  VDD

All inputs VSS or VDD



0.1



DPD current

IZZDPD

CS  VDD

All inputs VSS or VDD



5.0



Input high voltage

VIH

VDD = 1.8 V to 3.6 V

VDD  0.7



VDD  0.5

Input low voltage

VIL

VDD = 1.8 V to 3.6 V



0.5



VDD  0.3

Output high voltage

VOH

IOH   2 mA

VDD  0.5



Output low voltage

VOL

IOL  2 mA



0.4

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