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STM32WL33CB Folha de dados(PDF) 64 Page - STMicroelectronics

Nome de Peças STM32WL33CB
Descrição Electrónicos  Multiprotocol LPWAN 32-bit MCU Arm® Cortex®-M0 2(G)FSK, 4(G)FSK, ASK, D-BPSK, up to 256KB flash, 32KB SRAM
PDF  91 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32WL33CB Folha de dados(HTML) 64 Page - STMicroelectronics

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6.3.12
Low-speed internal ring oscillator
Table 52. LSI oscillator characteristics
Symbol
Parameter
Conditions
Min.(1)
Typ.(1)
Max.(1)
Unit
fLSI
nominal
LSI frequency
VDD=3.3V
TA = 30 °C
Typical corner
32.83
34.3
35.77
kHz
ΔfLSI /
fLSI(TA) /
TRange
Frequency variation
versus temperature
Standard deviation
-
140
-
ppm/ºC
1. Evaluated by characterization - not tested in production
6.3.13
Flash memory characteristics
The characteristics below are specified by design and not tested in production.
Table 53. Flash memory characteristics
Symbol
Parameter
Test conditions
Typ.
Max.
Unit
Tprog
32-bit programming time
-
20
40
µs
Tprog_burst
4x32-bit burst programming
time
-
4x20
4x40
tERASE
Page (2 kbyte) erase time
-
20
40
ms
tME
Mass erase time
-
20
40
IDD
Average consumption from
VDD
Write mode
3
-
mA
Erase mode
3
-
Mass erase
5
-
Table 54. Flash memory endurance and data retention
Symbol
Parameter
Conditions
Min(1)
Unit
NEND
Endurance
TA= -40 to +105 ºC
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
30
Years
1 kcycle(2) at TA = 105 °C
15
10 kcycles(2) at TA = 55 °C
30
10 kcycles(2) at TA = 85 °C
15
10 kcycles(2) at TA = 105 °C
10
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.
STM32WL33xx
Electrical characteristics
DS14221 - Rev 5
page 64/91



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