BYW100 datasheet(3/5 Pages) STMICROELECTRONICS

Nome de Peças	BYW100

Descrição Electrónicos	HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrônico	STMICROELECTRONICS [STMicroelectronics]

Página de início	http://www.st.com

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3 / 5 page

10152025

100

110

Rth(°C/W)

Rth(j-a)

Rth(j-l)

Lleads(mm)

Fig. 3: Thermal resistance versus lead length.

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

0.10

1.00

10.00

50.00

IFM(A)

Tj=25°C

Tj=100°C

(Typical values)

VFM(V)

Fig. 5: Forward voltage drop versus forward

current (maximum values).

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

0.01

0.10

1.00

Zth(j-a)/Rth(j-a)

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

tp(s)

Fig. 4: Variation of thermal impedance junction to

ambient versus pulse duration (recommended pad

layout, epoxy FR4, e(Cu)=35

µm).

100

200

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values).

100

150

trr(ns)

IF=1.5A

VR=30V

90% confidence

Tj=100°C

Tj=25°C

dIF/dt(A/µs)

Fig. 7: Reverse recovery time versus dIF/dt .

100

0.0

0.5

1.0

1.5

2.0

2.5

IRM(A)

IF=1.5A

VR=30V

90% confidence

Tj=100°C

Tj=25°C

dIF/dt(A/µs)

Fig. 8: Peak reverse recovery current versus

dIF/dt.

BYW100-200

3/5

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