BYW100 datasheet(2/5 Pages) STMICROELECTRONICS

2 / 5 page

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage

current

VR = VRRM

Tj = 25

°C

µA

Tj = 100

°C

0.5

VF **

Forward voltage drop

IF = 4.5 A

Tj = 25

°C

1.2

IF = 1.5 A

Tj = 100

°C

0.78

0.85

Pulse test : * tp = 5 ms,

δ < 2 %

** tp = 380

µs, δ < 2 %

To evaluate the maximum conduction losses use the following equation :

P = 0.75 x IF(AV) + 0.075 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient *

°C/W

* On infinite heatsink with 10mm lead length.

THERMAL RESISTANCES

Symbol

Tests conditions

Min.

Typ.

Max.

Unit

trr

IF = 1 A

dIF/dt = - 50 A/

µs VR = 30 V

Tj = 25

°C

tfr

IF = 1.5 A

dIF/dt = -50 A/

µs

Measured at 1.1 x VF max.

Tj = 25

°C

VFP

IF = 1.5 A

dIF/dt = -50 A/

µs

Tj = 25

°C

Qrr

IF = 1.5 A

dIF/dt = -20 A/

µs VR ≤ 30 V

Tj = 25°C

RECOVERY CHARACTERISTICS

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

PF(av)(W)

δ = 0.2

δ = 0.5

δ = 1

δ = 0.05

δ = 0.1

δ=tp/T

IF(av) (A)

Fig. 1: Average forward power dissipation versus

average forward current.

100

125

150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

IF(av)(A)

Rth(j-a)=100°C/W

Rth(j-a)=Rth(j-l)

Tamb(°C)

Fig. 2: Average forward current versus ambient

temperature (

δ=0.5).

BYW100-200

2/5

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