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ISCF8086 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCF8086
Descrição Electrónicos  SiC N-Channel MOSFET
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCF8086 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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ISCF8086
eq SCT10N120
SiC N-Channel MOSFET
www.iscsemi.com
1
FEATURES
·
Very tight variation of on-resistance vs. temperature
·
Very high operating junction temperature capability
·
Very fast and robust intrinsic body diode
APPLICATIONS
·
DC-DC converters
·
UPS
·
SMPS
·
Motor drives
Absolute Maximum Ratings(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
1200
V
VGSS
Gate-Source Opetation Voltage
-10/+25
V
ID
Drain Current-Continuous
12
A
Drain Current-Continuous@Tc=100℃
10
A
IDM
Drain Current-Single Pluse
24
A
PD
Total Dissipation @TC=25℃
150
W
TJ
Max. Operating Junction Temperature
200
℃
Tstg
Storage Temperature
-55~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.17
℃
/W
file:///C:/Users/Administrator/Do
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orage/Temp/1718069263025.jpg


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