ISCF8086

eq SCT10N120

SiC N-Channel MOSFET

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= 1.0mA

1200

--

--

V

VGS(th)

Gate Threshold Voltage

VDS = VGS , ID =0.25mA

1.8

--

--

V

RDS(ON)

Drain-Source On-stage Resistance

VGS=20V, ID=6A

--

--

690

mΩ

VGS=20V, ID=6A

@Tc=150℃

--

520

--

mΩ

VGS=20V, ID=6A

@Tc=200℃

--

580

--

mΩ

IGSS

Gate Source Leakage Current

VGS= -10/+22V, VDS= 0V

--

--

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS = 1200V, VGS = 0V

--

--

10

μA

VSD

Diode Forward Voltage

ISD= 6A, VGS=0V

--

4.3

--

V

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you

intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose,

nor does ISC assume any liability arising from the application or use of any products, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages.

It is strictly prohibited to reprint or copy part or all of this datasheet without permission from ISC.