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ISCF8081 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCF8081 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() ISCF8081 eq G3R30MT12K SiC N-Channel MOSFET www.iscsemi.com 1 FEATURES · High blocking voltage with low on-resistance · High-speed switching with low capacitances · Robust Body Diode with Low VF APPLICATIONS · UPS · High voltage DC/DC converters · Switched mode power supplies · Renewable energy Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1200 V VGSS Gate-Source Opetation Voltage -10/+22 V ID Drain Current-Continuous@Tc=25℃ 70 A ID Drain Current-Continuous@Tc=135℃ 50 A IDM Drain Current-Single Pluse 200 A PD Total Dissipation @TC=25℃ 50 W TJ Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.53 ℃ /W |
Nº de peça semelhante - ISCF8081 |
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Descrição semelhante - ISCF8081 |
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