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ISCF8081 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCF8081 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISCF8081 eq G3R30MT12K SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID= 0.1mA 1200 -- -- V IGSS Gate Source Leakage Current VGS= -10/+22V, VDS= 0V -- -- ± 100 nA IDSS Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V -- 1 -- uA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 24.0mA 1.8 -- -- V RDS(ON) Drain-Source On-stage Resistance VGS= 15V, ID= 45A -- 30 -- mΩ VGS= 18V, ID= 45A -- -- 34 mΩ VSD Diode Forward Voltage ISD= 22A, VGS= -5V -- 4.7 -- V PACKAGE OUTLINE: |
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