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IRF7N1405 Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRF7N1405
Descrição Electrónicos  HEXFET POWER MOSFET SURFACE MOUNT (SMD-1)
PDF  7 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRF7N1405 Folha de dados(HTML) 2 Page - International Rectifier

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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
55
V
VGS = 0V, ID = 250µA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.061
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.0053
VGS = 10V, ID = 55A
Resistance
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
68
S
VDS =25V, IDS = 55A Ã
IDSS
Zero Gate Voltage Drain Current
25
VDS = 55V ,VGS=0V
250
VDS = 44V,
VGS = 0V, TJ =125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
200
VGS =10V, ID = 55A
Qgs
Gate-to-Source Charge
40
nC
VDS = 44V
Qgd
Gate-to-Drain (‘Miller’) Charge
80
td(on)
Turn-On Delay Time
20
VDD = 28V, ID = 55A,
tr
Rise Time
90
VGS = 10V, RG = 2.4Ω
td(off)
Turn-Off Delay Time
200
tf
Fall Time
150
LS + LD
Total Inductance
4.0
Measured from the center of drain
l
pad to the center of source pad
Ciss
Input Capacitance
5100
VGS = 0V, VDS = 25V
Coss
Output Capacitance
1290
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
300
nA
Ã
nH
ns
µA
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
RthJC
Junction-to-Case
1.25
°C/W
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
55*
ISM
Pulse Source Current (Body Diode)
À
220
VSD Diode Forward Voltage
1.3
V
Tj = 25°C, IS = 55A, VGS = 0V Ã
trr
Reverse Recovery Time
130
ns
Tj = 25°C, IF = 55A, di/dt ≤ 100A/µs
QRR
Reverse Recovery Charge
380
nC
VDD ≤ 25V Ã
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package



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