4-537
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
RF OUT
RF IN
GND
GND
12
11
10
9
8
7
4
5
6
1
2
3
GND
GND
RF3220
HIGH LINEARITY/DRIVER AMPLIFIER
• Basestation Applications
• Cellular and PCS Systems
• CDMA, W-CDMA Systems
• GSM/EDGE Systems
• Final PA for Low-Power Applications
The RF3220 is a high-efficiency GaAs Heterojunction
Bipolar Transistor (HBT) amplifier packaged in a low-cost
surface-mount package. This amplifier is ideal for use in
applications requiring high-linearity and low noise figure
over the 500MHz to 3GHz frequency range. The RF3220
operates from a single 5V power supply, and is assem-
bled in an economical 3mmx3mm QFN package.
• 500MHz to 2GHz
• +40.8dBm Output IP3
• +14.2dB Gain at 1850MHz
• +12.4dBm Input P1dB at 1850MHz
• 2.8dB Noise Figure at 1850MHz
• Single 5V Power Supply
RF3220
High Linearity/Driver Amplifier
RF3220PCBA-41XFully Assembled Evaluation Board
0
Rev A1 050822
Dimensions in mm.
Shaded lead is pin 1.
0.60
0.24
TYP
0.10
C AB
M
0.30
0.18
0.50
0.75
0.50
1.25
0.95
SQ.
PIN 1 ID
R.20
0.90
0.85
2 PLCS
0.05 C
0.70
0.65
0.05
0.00
12°
MAX
-C-
SEATING
PLANE
-B-
3.00
2 PLCS
0.10 C B
2.75 SQ.
2 PLCS
0.10 C A
2 PLCS
0.10 C B
-A-
2 PLCS
0.10 C A
3.00
Package Style: QFN, 12-Pin, 3x3
RoHS Compliant & Pb-Free Product
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