Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage

55

V

VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

0.015

V/°C Reference to 25°C, ID = 1mA

140

VGS = 10V, ID = 2.0A „

200

m

Ω VGS = 5.0V, ID = 1.2A „

280

VGS = 4.0V, ID = 1.0A „

VGS(th)

Gate Threshold Voltage

1.0

2.0

V

VDS = VGS, ID = 250µA

gfs

Forward Transconductance

2.3

S

VDS = 25V, ID = 1.0A

25

µA

VDS = 55V, VGS = 0V

250

VDS = 44V, VGS = 0V, TJ = 150°C

Gate-to-Source Forward Leakage

100

nA

VGS = 16V

Gate-to-Source Reverse Leakage

-100

VGS = -16V

Qg

Total Gate Charge

9.5

14

ID = 2.0A

Qgs

Gate-to-Source Charge

1.1

1.7

nC

VDS = 44V

Qgd

Gate-to-Drain ("Miller") Charge

3.0

4.4

VGS = 10V, See Fig. 6 and 9 „

td(on)

Turn-On Delay Time

5.1

VDD = 28V

tr

Rise Time

4.9

ID = 2.0A

ns

td(off)

Turn-Off Delay Time

14

RG = 6.0Ω

tf

Fall Time

2.9

RD = 14Ω, See Fig. 10 „

Ciss

Input Capacitance

230

VGS = 0V

Coss

Output Capacitance

66

pF

VDS = 25V

Crss

Reverse Transfer Capacitance

30

ƒ = 1.0MHz, See Fig. 5

IGSS

RDS(on)

Static Drain-to-Source On-Resistance

IDSS

Drain-to-Source Leakage Current

 Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )

ƒ ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C

Notes:

‚ VDD = 25V, starting TJ = 25°C, L = 4.0mH RG = 25Ω, IAS = 4.0A. (See Figure 12)

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

IS

Continuous Source Current

MOSFET symbol

(Body Diode)

showing the

ISM

Pulsed Source Current

integral reverse

(Body Diode) 

p-n junction diode.

VSD

Diode Forward Voltage

1.0

V

TJ = 25°C, IS = 2.0A, VGS = 0V „

trr

Reverse Recovery Time

41

61

ns

TJ = 25°C, IF = 2.0A

Qrr

Reverse RecoveryCharge

73

110

nC

di/dt = 100A/µs „

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

16

1.3

A

Electrical CharacteristicsT

j

= 25°C unless otherwise specifed

55V N-Channel MOSFET

IRLL014

Page 2 of 8

Rev:2023A2