QG

QGS

QGD

VG

Charge

+

-

VDS

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

D.U.T.

VDS

ID

IG

3mA

VGS

.3

µF

50K

Ω

.2

µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

VDS

90%

10%

VGS

td(on)

tr

td(off) tf

Fig 10b. Switching Time Waveforms

Fig 10a. Switching Time Test Circuit

Fig 9a. Basic Gate Charge Waveform

Fig 9b. Gate Charge Test Circuit

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

10V

0.1

1

10

100

1000

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

t , Rectangular Pulse Duration (sec)

1

D = 0.50

0.01

0.02

0.05

0.10

0.20

SINGLE PULSE

(THERMAL RESPONSE)

A

P

t2

1

t

DM

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

12

J

DM

thJA

A

55V N-Channel MOSFET

IRLL014

Page 5 of 8

Rev:2023A2