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2STBN15D100 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças 2STBN15D100
Descrição Electrónicos  Silicon NPN Power Darlington Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2STBN15D100 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Darlington Transistor
2STBN15D100
www.iscsemi.com
1
DESCRIPTION
·
High DC current gain
·
Lead formed for surface mount applications
·
Built-in a damper diode at E-C
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Linear and switching industrial equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
12
A
ICM
Collector Peak Current
15
A
IB
Base Current-Continuous
0.2
A
PC
Collector Power Dissipation
TC=25℃
70
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.8
℃
/W
2
2
3
1


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