Silicon NPN Power Darlington Transistor

2STBN15D100

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 30mA; IB= 0

100

--

--

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 0.5A; IB= 1mA

--

--

1.5

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 4A; IB= 40mA

--

--

1.3

V

VBE(on)

Base-Emitter On Voltage

IC= 3A; VCE= 3V

--

--

2.5

V

ICBO

Collector Cutoff Current

VCB= 100V; IE= 0

--

--

100

uA

ICEO

Collector Cutoff Current

VCE= 50V; IB= 0

--

--

100

uA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

--

--

2

mA

hFE

DC Current Gain

IC= 3A; VCE= 3V

750

--

--

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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