PHN708 datasheet(5/12 Pages) PHILIPS

5 / 12 page

1998 Mar 17

Philips Semiconductors

Product speciﬁcation

7 N-channel 80 m

Ω FET array

enhancement mode MOS transistors

PHN708

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Per FET

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID =10 µA30

−−

VGSth

gate-source threshold voltage

VGS =VDS; ID = 1 mA

−

2.8

IDSS

drain-source leakage current

VGS = 0; VDS =24V

−−

100

IGSS

gate leakage current

VGS = ±20 V; VDS =0

−−±100 nA

RDSon

drain-source on-state resistance

VGS = 4.5 V; ID = 0.75 A

−−

130

Ω

VGS = 10 V; ID = 1.5 A

−−

Ω

Ciss

input capacitance

VGS = 0; VDS =24V; f=1MHz

−

180

−

Coss

output capacitance

VGS = 0; VDS =24V; f=1MHz

−

Crss

reverse transfer capacitance

VGS = 0; VDS =24V; f=1MHz

−

total gate charge

VGS = 10 V; VDD = 15 V; ID =1A

−

5.4

QGS

gate-source charge

VDD =15V; ID =1A

−

0.4

−

QGD

gate-drain charge

VDD =15V; ID =1A

−

1.6

−

Switching times

td(on)

turn-on delay time

VGS = 0 to 10 V; VDD =20V;

ID = 1 A; Rgen =6 Ω

−

fall time

VGS = 0 to 10 V; VDD =20V;

ID = 1 A; Rgen =6 Ω

−

2.5

−

ton

turn-on switching time

VGS = 0 to 10 V; VDD =20V;

ID = 1 A; Rgen =6 Ω

−

5.5

td(off)

turn-off delay time

VGS =10to0V; VDD =20V;

ID = 1 A; Rgen =6 Ω

−

rise time

VGS =10to0V; VDD =20V;

ID = 1 A; Rgen =6 Ω

−

toff

turn-off switching time

VGS =10to0V; VDD =20V;

ID = 1 A; Rgen =6 Ω

−

Source-drain diode

VSD

source-drain diode forward voltage

VGD = 0; IS = 1.25 A

−−

trr

reverse recovery time

IS = 1.25 A; di/dt = −100 A/µs

−

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