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AM29SL400CB100REF Folha de dados(PDF) 38 Page - Advanced Micro Devices

Nome de Peças AM29SL400CB100REF
Descrição Electrónicos  4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
PDF  44 Pages
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Fabricante Electrônico  AMD [Advanced Micro Devices]
Página de início  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29SL400CB100REF Folha de dados(HTML) 38 Page - Advanced Micro Devices

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36
Am29SL400C
Am29SL400C_00_A6 January 23, 2007
D A TA
SH EE T
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Notes:
1.
Not 100% tested.
2.
See the Erase and Programming Performance‚ on page 38 sec-
tion for more information.
Parameter
Description
Speed Options
JEDEC
Std
-100R
-110
-120
-150
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
110
120
150
ns
tAVEL
tAS
Address Setup Time
Min
0
ns
tELAX
tAH
Address Hold Time
Min
50
55
60
70
ns
tDVEH
tDS
Data Setup Time
Min
50
55
60
70
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
50
55
60
70
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation
(Notes 1, 2)
Byte
Typ
10
µs
Word
Typ
12
tWHWH2
tWHWH2
Sector Erase Operation (Notes 1, 2)
Typ
2
sec



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