MMBTA55 datasheet(1/3 Pages) DIODES

Nome de Peças	MMBTA55

Descrição Electrónicos	PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

PDF	3 Pages

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Fabricante Electrônico	DIODES [Diodes Incorporated]

Página de início	http://www.diodes.com

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1 / 3 page

E

B

C

DS30054 Rev. 9 - 2

1 of 3

MMBTA55 / MMBTA56

www.diodes.com

ã Diodes Incorporated

MMBTA55 / MMBTA56

PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

·

Epitaxial Planar Die Construction

·

Complementary NPN Types Available (MMBTA05 /

MMBTA06)

·

Ideal for Medium Power Amplification and Switching

·

Lead Free/RoHS Compliant (Note 3)

·

Qualified to AEC-Q101 Standards for High Reliability

Characteristic

Symbol

MMBTA55

MMBTA56

Unit

Collector-Base Voltage

VCBO

-60

-80

V

Collector-Emitter Voltage

VCEO

-60

-80

V

Emitter-Base Voltage

VEBO

-4.0

V

Collector Current - Continuous (Note 1)

IC

-500

mA

Power Dissipation (Note 1)

Pd

300

mW

Thermal Resistance, Junction to Ambient (Note 1)

RqJA

417

°C/W

Operating and Storage and Temperature Range

Tj,TSTG

-55 to +150

°C

Maximum Ratings

@ TA = 25

°C unless otherwise specified

A

E

J

L

TOP VIEW

M

B

C

B

E

H

G

D

K

Mechanical Data

·

Case: SOT-23

·

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

·

Moisture Sensitivity: Level 1 per J-STD-020C

·

Terminal Connections: See Diagram

·

Terminals: Solderable per MIL-STD-202, Method 208

·

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

·

MMBTA55 Marking (See Page 2): K2H

·

MMBTA56 Marking (See Page 2): K2G

·

Ordering & Date Code Information: See Page 2

·

Weight: 0.008 grams (approximate)

Electrical Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Collector-Base Breakdown Voltage

MMBTA55

MMBTA56

V(BR)CBO

-60

-80

¾

V

IC = -100

mA, IE = 0

Collector-Emitter Breakdown Voltage

MMBTA55

MMBTA56

V(BR)CEO

-60

-80

¾

V

IC = -1.0mA, IB = 0

Emitter-Base Breakdown Voltage

V(BR)EBO

-4.0

¾

V

IE = -100

mA, IC = 0

Collector Cutoff Current

MMBTA55

MMBTA56

ICBO

¾

-100

nA

VCB = -60V, IE = 0

VCB = -80V, IE = 0

Collector Cutoff Current

MMBTA55

MMBTA56

ICEX

¾

-100

nA

VCE = -60V, IBO = 0V

VCE = -80V, IBO = 0V

ON CHARACTERISTICS (Note 2)

DC Current Gain

hFE

100

¾¾

IC = -10mA, VCE = -1.0V

IC = -100mA, VCE = -1.0V

Collector-Emitter Saturation Voltage

VCE(SAT)

¾

-0.25

V

IC = -100mA, IB = -10mA

Base-Emitter Saturation Voltage

VBE(SAT)

¾

-1.2

V

IC = -100mA, VCE = -1.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT

50

¾

MHz

VCE = -1.0V, IC = -100mA,

f = 100MHz

SOT-23

Dim

Min

Max

A

0.37

0.51

B

1.20

1.40

C

2.30

2.50

D

0.89

1.03

E

0.45

0.60

G

1.78

2.05

H

2.80

3.00

J

0.013

0.10

K

0.903

1.10

L

0.45

0.61

M

0.085

0.180

a

0

°

8

°

All Dimensions in mm

Notes:

1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. No purposefully added lead.

Features

Lead-free

SPICE MODELS: MMBTA55 MMBTA56

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