UT6302L-AE3-R datasheet(3/9 Pages) VBSEMI

Nome de Peças	UT6302L-AE3-R

Descrição Electrónicos	P-Channel 20-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de início	www.VBsemi.com

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

00.5

11.5

DS - Drain-to-Source Voltage (V)

GS = 5 V thru 3 V

GS = 1.5 V

GS = 2.5 V

GS = 2 V

0.00

0.02

0.04

0.06

0.08

D -Drain Current (A)

GS = 2.5 V

GS = 4.5 V

GS = 10 V

0369

g - Total Gate Charge (nC)

DS = 16 V

DS = 10 V

D = 5.1 A

DS = 5 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.5

1.5

GS - Gate-to-Source Voltage (V)

C = 125 °C

C = - 55 °C

C = 25 °C

350

700

1050

1400

DS - Drain-to-Source Voltage (V)

iss

oss

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0.7

0.9

1.1

1.3

1.5

- 50

- 25

100

125

150

J - Junction Temperature (°C)

GS = 10 V

GS = 4.5 V

UT6302L-AE3-R

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