UT6302L-AE3-R datasheet(4/9 Pages) VBSEMI

Nome de Peças	UT6302L-AE3-R

Descrição Electrónicos	P-Channel 20-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrônico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de início	www.VBsemi.com

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

0.5

0.7

0.8

1.0

1.1

- 50

- 25

100

125

150

J -Temperature (°C)

D = 250 μA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.02

0.04

0.06

0.08

2468

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 5.1 A

0.01

0.1

100

1000

Time (s)

TA = 25 °C

Safe Operating Area

0.01

0.1

100

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 ms

Limited by R

DS(on)*

1 ms

C = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 μs

1 s, 10 s

UT6302L-AE3-R

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