1996 Jul 08

2

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

FEATURES

• Power Amplifier (PA) overall efficiency 45%

• 35.5 dB gain

• 0 dBm input power

• Gain control range >55 dB

• Integrated power sensor driver

• Low output noise floor of PA < −129 dBm/Hz in GSM RX

band

• Wide operating temperature range −20 to +85 °C

• LQFP 48 pin package

• Compatible with power ramping controller PCA5075

• Compatible with GSM RF transceiver SA1620.

APPLICATIONS

• 880 to 915 MHz hand-held transceivers for E-GSM

applications

• 900 MHz TDMA systems.

GENERAL DESCRIPTION

The CGY2010G and CGY2011G are GSM class 4 GaAs

Monolithic Microwave Integrated Circuits (MMICs) power

amplifiers specifically designed to operate at 4.8 V battery

supply. These ICs also include a power sensor driver so

that no directional coupler is required in the power control

loop.

Both ICs have the same performance but are issued from

different wafer fabs.

The PAs require only a 30 dB harmonic low-pass filter to

comply with the GSM transmit spurious specification.

They can be switched off and their power controlled by

monitoring the actual drain voltage applied to the amplifier

stages.

QUICK REFERENCE DATA

Note

1. For conditions, see Chapters “AC characteristics” and “DC characteristics”.

ORDERING INFORMATION

SYMBOL

MIN.

TYP.

MAX.

UNIT

positive supply voltage

−

4.2

−

V

positive peak supply current

−

1.8

−

A

maximum output power

−

35.5

−

dBm

operating ambient temperature

−20

−

+85

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

CGY2010G

LQFP48

plastic low profile quad flat package; 48 leads; body 7

× 7 × 1.4 mm

SOT313-2

CGY2011G