1996 Jul 08

8

Philips Semiconductors

Objective specification

GSM 4 W power amplifiers

CGY2010G; CGY2011G

APPLICATION INFORMATION

Fig.3 Evaluation board schematic (FR4, 0.8 mm).

handbook, full pagewidth

1

2

3

4

5

6

7

8

9

10

11

48 47 46 45 44 43 42 41 40 39 38 37

12

MGB764

13 14 15 16 17 18 19 20 21 22 23 24

1 k

Ω

560

Ω

1 k

Ω

39 pF

39

pF

100

Ω

100

Ω

39

Ω

−90 µA

100 pF

100 pF

0.8 to 3 V

BSR14

10

nF

10

pF

33 pF

(1)

(4)

(1)

(1)

22

nH

TRL3

(2)

TRL1

PHP109

BAS70

BAS70

1 nF

10

pF

8

pF

1.25 V

PMOS

Ron < 0.1 Ω

10 nH

1.5 pF

36

35

34

33

32

31

30

29

28

27

26

25

1

nF

27

pF

1

nF

10 pF

100 pF

X7R

DC output

Vdiode

Vcontrol

Vbat

+4.8 V

Zc = 50 Ω

47

Ω

(3)

TRL2

100

Ω

PA

input

PA

output

−2 V

CGY2010G

CGY2011G

VGG1

VGG2

RFO/VDD4

VDD1

VDD2

VDD3

RFI

DETO

(1) These capacitors are type: SMD0402; rest of the capacitors: SMD0603.

(2) TRL1: width: 0.3 mm; length: 16 mm.

(3) TRL2: width: 0.3 mm; length: 6.3 mm.

(4) TRL3: width: 0.3 mm; length: 20 mm.