STB13007DT4 datasheet(4/10 Pages) STMICROELECTRONICS

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Electrical characteristics

STB13007DT4

4/10

Electrical characteristics

(Tcase = 25°C unless otherwise specified)

Note (1) Pulsed duration = 300

µs, duty cycle ≤1.5%

Table 3.

Electrical characteristics

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VBE =0V)

VCE =700V

Tc =100°C

0.5

µA

ICEO

Collector cut-off current

(IB =0)

VCE =400V

100

µA

IEBO

Emitter cut-off current

(IC =0)

VEB =9V

100

µA

VCEO(sus) (1)

Collector-emitter

sustaining voltage

(IB = 0)

IC =10mA

400

VCE(sat) (1) Collector-emitter

saturation voltage

IC = 2A _ _ _ IB = 0.4A

IC = 5 A

__ _ IB = 1A

IC = 8 A

__ _ IB = 2A

IC = 5 A

__ _ IB = 1A

Tc =100°C

0.8

1.5

VBE(sat) (1)

Base-emitter saturation

voltage

IC = 2A _ _ _ IB = 0.4A

IC = 5A

__ _ IB = 1A

IC = 5A

__ _ IB = 1A

Tc =100°C

1.2

1.6

1.5

hFE

DC current gain

IC = 2A _ _VCE = 5V

IC = 5A

_VCE = 5V

Diode forward voltage

IC = 3A

2.5

Inductive load

Storage time

Fall time

IC = 5A ___ VClamp = 250V

IB1 = 1A

VBE(off) = -5V

RBB = 0Ω

L = 200

µH

(see fig. 11)

1.7

2.3

150

µs

Inductive load

Storage time

Fall time

IC = 5A ___ VClamp = 250V

IB1 = 1A

VBE(off) = -5V

RBB = 0Ω

L = 200

µH

Tc =125°C (see fig. 11)

2.2

150

µs

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