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STB13007DT4 Folha de dados(PDF) 1 Page - STMicroelectronics |
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STB13007DT4 Folha de dados(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() June 2006 Rev 1 1/10 10 Order codes Part Number Marking Package Packing STB13007DT4 B13007D D2PAK Tape & Reel STB13007DT4 High voltage fast-switching NPN power transistor General features ■ Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range ■ High voltage capability ■ Integrated free-wheeling diode ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Fully characterized at 125 °C ■ Large RBSOA ■ In compliance with the 2002/93/EC European Directive Description The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. Applications ■ Electronic transformers for halogen lamps ■ Switch mode power supplies Internal schematic diagram D2PAK (T0-263) 1 3 www.st.com |
Nº de peça semelhante - STB13007DT4 |
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Descrição semelhante - STB13007DT4 |
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