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BU506DF Folha de dados(PDF) 4 Page - NXP Semiconductors |
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BU506DF Folha de dados(HTML) 4 Page - NXP Semiconductors |
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4 / 12 page ![]() 1997 Aug 14 3 Philips Semiconductors Product specification Silicon diffused power transistors BU506F; BU506DF Fig.2 Forward bias SOAR (no heatsink compound). Mounted without heatsink compound and 30 ±5 N force on centre of package. Tmb =25 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. handbook, full pagewidth MGB933 1 10 1102 103 104 I VCE (V) 10 10−1 102 10−2 10−4 10−3 IC (A) ICM max IC max II |
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