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BU506DF Folha de dados(PDF) 7 Page - NXP Semiconductors

Nome de Peças BU506DF
Descrição Electrónicos  Silicon diffused power transistors
PDF  12 Pages
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Fabricante Electrônico  PHILIPS [NXP Semiconductors]
Página de início  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU506DF Folha de dados(HTML) 7 Page - NXP Semiconductors

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1997 Aug 14
6
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 2; Tj =25 °C.
handbook, halfpage
2
0
10−2
10−1
110
MGB886
1
VCEsat
(V)
IC (A)
Fig.9
Base-emitter saturation voltage as a
function of base current; typical values.
Tj =25 °C.
(1) IC =3A.
(2) IC =2A.
(3) IC =1A.
handbook, halfpage
MGB901
03
1.2
0
0.8
0.4
2
1
VBEsat
(V)
IB (A)
(1)
(2)
(3)
Fig.10 DC current gain; typical values.
VCE = 5 V; Tj =25 °C.
handbook, halfpage
10−2
10−1
1
102
10
1
hFE
IC (A)
10
MGB877
Fig.11 Switching time waveforms.
handbook, halfpage
MBH382
time
time
IB (end)
10%
90%
ts
tf
iC
ICsat
iB



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