BU505 datasheet(3/12 Pages) PHILIPS

Nome de Peças	BU505

Descrição Electrónicos	Silicon diffused power transistors

PDF	12 Pages

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Fabricante Electrônico	PHILIPS [NXP Semiconductors]

Página de início	http://www.nxp.com

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3 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BU505; BU505D

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCESM

collector-emitter peak voltage

VBE =0

−

1500

VCEO

collector-emitter voltage

open base

−

700

ICsat

collector saturation current

−

collector current (DC)

see Fig.3

−

2.5

ICM

collector current (peak value)

see Fig.3

−

base current (DC)

−

IBM

base current (peak value)

−

Ptot

total power dissipation

Tmb ≤ 25 °C; see Fig.4

−

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

Fig.2 Transient thermal impedance.

handbook, full pagewidth

MGB859

10−1

10−2

10−1

110

tp (ms)

102

Zth j−mb

(K/W)

δ = 1

0.75

0.50

0.33

0.20

0.10

0.05

0.02

0.01

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