BU505 datasheet(2/12 Pages) PHILIPS

2 / 12 page

1997 Aug 13

Philips Semiconductors

Product speciﬁcation

Silicon diffused power transistors

BU505; BU505D

DESCRIPTION

High-voltage, high-speed switching

NPN power transistor in a TO-220AB

package. The BU505D has an

integrated efficiency diode.

APPLICATIONS

• Horizontal deflection circuits of

colour television receivers.

PINNING

DESCRIPTION

base

collector; connected to

mounting base

emitter

Fig.1 Simplified outline (TO-220AB) and symbols.

a. BU505.

b. BU505D.

MBK106

12 3

MBB008

MBB077

QUICK REFERENCE DATA

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCESM

collector-emitter peak voltage

VBE =0

−

1500

VCEO

collector-emitter voltage

open base

−

700

VCEsat

collector-emitter saturation

voltage

IC = 2 A; IB = 900 mA

−

diode forward voltage

(BU505D)

IF =2A

−

1.8

ICsat

collector saturation current

−

collector current (DC)

see Fig.3

−

2.5

ICM

collector current (peak value)

see Fig.3

−

Ptot

total power dissipation

Tmb ≤ 25 °C; see Fig.4

−

fall time

inductive load; see Fig.7

0.9

−µs

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-mb

thermal resistance from junction to mounting base

1.67

K/W

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