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IRFN450 Folha de dados(PDF) 2 Page - International Rectifier |
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IRFN450 Folha de dados(HTML) 2 Page - International Rectifier |
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2 / 7 page ![]() IRFN450 2 www.irf.com Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 500 — — V VGS = 0V, ID = 1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.68 — V/°C Reference to 25°C, ID = 1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.415 VGS = 10V, ID = 8.0A Resistance — — 0.515 VGS = 10V, ID = 12A VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.5 — — S ( )VDS > 15V, IDS = 8.0A ➃ IDSS Zero Gate Voltage Drain Current — — 25 VDS= 400V ,VGS=0V — — 250 VDS = 400V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V Qg Total Gate Charge — — 120 VGS =10V, ID = 12A Qgs Gate-to-Source Charge — — 19 nC VDS =250V Qgd Gate-to-Drain (‘Miller’) Charge — — 70 td(on) Turn-On Delay Time — — 35 VDD = 250V, ID = 12A, tr Rise Time — — 190 VGS =10V, RG = 2.35Ω td(off) Turn-Off Delay Time — — 170 tf Fall Time — — 130 LS + LD Total Inductance — 4.0 — Ciss Input Capacitance — 2700 — VGS = 0V, VDS = 25V Coss Output Capacitance — 600 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 240 — nA ➃ nH ns µA Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page Thermal Resistance Parameter Min Typ Max Units Test Conditions RthJC Junction-to-Case — — 0.83 RthJ-PCB Junction-to-PC board — 3.0 — Soldered to a copper-clad PC board °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — 12 ISM Pulse Source Current (Body Diode) ➀ —— 48 VSD Diode Forward Voltage — — 1.7 V Tj = 25°C, IS = 12A, VGS = 0V ➃ trr Reverse Recovery Time — — 1600 nS Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs QRR Reverse Recovery Charge — — 14 µC VDD ≤ 30V ➃ ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A Measured from the center of drain pad to center of source pad. Ω |
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