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IRFN450 Folha de dados(PDF) 2 Page - International Rectifier

Nome de Peças IRFN450
Descrição Electrónicos  POWER MOSFET SURFACE MOUNT(SMD-1)
PDF  7 Pages
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Fabricante Electrônico  IRF [International Rectifier]
Página de início  http://www.irf.com
Logo IRF - International Rectifier

IRFN450 Folha de dados(HTML) 2 Page - International Rectifier

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IRFN450
2
www.irf.com
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
500
V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.68
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
0.415
VGS = 10V, ID = 8.0A
Resistance
0.515
VGS = 10V, ID = 12A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
6.5
S ( )VDS > 15V, IDS = 8.0A ➃
IDSS
Zero Gate Voltage Drain Current
25
VDS= 400V ,VGS=0V
250
VDS = 400V,
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
120
VGS =10V, ID = 12A
Qgs
Gate-to-Source Charge
19
nC
VDS =250V
Qgd
Gate-to-Drain (‘Miller’) Charge
70
td(on)
Turn-On Delay Time
35
VDD = 250V, ID = 12A,
tr
Rise Time
190
VGS =10V, RG = 2.35Ω
td(off)
Turn-Off Delay Time
170
tf
Fall Time
130
LS + LD
Total Inductance
4.0
Ciss
Input Capacitance
2700
VGS = 0V, VDS = 25V
Coss
Output Capacitance
600
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
240
nA
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
0.83
RthJ-PCB
Junction-to-PC board
3.0
Soldered to a copper-clad PC board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
12
ISM
Pulse Source Current (Body Diode) ➀
——
48
VSD
Diode Forward Voltage
1.7
V
Tj = 25°C, IS = 12A, VGS = 0V ➃
trr
Reverse Recovery Time
1600
nS
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
QRR Reverse Recovery Charge
14
µC
VDD ≤ 30V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from the center of drain
pad to center of source pad.



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