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ISCND454M Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

Nome de Peças ISCND454M
Descrição Electrónicos  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Fabricante Electrônico  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCND454M Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
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isc Silicon NPN Darlington Power Transistor
ISCND454M
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO= 500V (Min.)
·
High DC Current Gain-
: hFE= 1800(Min.)@IC= 5A
·
Low Collector Saturation Voltage-
: VCE (sat)= 1.8V(Max.)@ IC=12.5A
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general purpose amplifiers, low frequency
switching and motor control applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continunous
5
A
ICM
Collector Current-Peak
25
A
IB
Base Current-Continunous
0.5
A
PC
Collector Power Dissipation
@TC=25℃
250
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature Range
-65~200
℃


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