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STM8AF6366UD Folha de dados(PDF) 63 Page - STMicroelectronics

Nome de Peças STM8AF6366UD
Descrição Electrónicos  Automotive 8-bit MCU, with up to 32-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V
PDF  95 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
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STM8AF6366UD Folha de dados(HTML) 63 Page - STMicroelectronics

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DS12343 Rev 2
63/95
STM8AF6366
Electrical characteristics
93
10.3.6
I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage, using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Table 35. I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage
-
-0.3 V
-
0.3 x VDD
V
VIH
Input high level voltage
0.7 x VDD
-VDD + 0.3 V
Vhys
Hysteresis(1)
-
0.1 x
VDD
-
VOH
Output high level voltage
Standard I/0, VDD = 5 V,
I = 3 mA
VDD - 0.5 V
-
-
Standard I/0, VDD = 3 V,
I = 1.5 mA
VDD - 0.4 V
-
-
VOL
Output low level voltage
High sink and true open
drain I/0, VDD = 5 V
I = 8 mA
--
0.5
Standard I/0, VDD = 5 V
I = 3 mA
--
0.6
Standard I/0, VDD = 3 V
I = 1.5 mA
--
0.4
Rpu
Pull-up resistor
VDD = 5 V, VIN = VSS
35
50
65
k
Ω
tR, tF
Rise and fall time
(10% - 90%)
Fast I/Os
Load = 50 pF
--
35(2)
ns
Standard and high sink I/Os
Load = 50 pF
--
125(2)
Fast I/Os
Load = 20 pF
--
20(2)
Standard and high sink I/Os
Load = 20 pF
--
50(2)
Ilkg
Digital input pad leakage
current
VSS ≤ VIN ≤ VDD
--
±1
µA
Ilkg ana
Analog input pad leakage
current
VSS ≤ VIN ≤ VDD
-40 °C < TA < 125 °C
-
-
±250
nA
VSS ≤ VIN ≤ VDD
-40 °C < TA < 150 °C
-
-
±500
Ilkg(inj)
Leakage current in
adjacent I/O(3)
Injection current ±4 mA
-
-
±1(3)
µA
IDDIO
Total current on either
VDDIO or VSSIO
Including injection currents
-
-
60
mA
1. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by characterization.



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