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STM8AF6366UD Folha de dados(PDF) 53 Page - STMicroelectronics

Nome de Peças STM8AF6366UD
Descrição Electrónicos  Automotive 8-bit MCU, with up to 32-Kbyte Flash memory, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V
PDF  95 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM8AF6366UD Folha de dados(HTML) 53 Page - STMicroelectronics

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DS12343 Rev 2
53/95
STM8AF6366
Electrical characteristics
93
Table 22. Operating conditions at power-up/power-down
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tVDD
VDD rise time rate
-
2(1)
1. Guaranteed by design.
-
∞
µs/V
VDD fall time rate
-
2(1)
-
∞
tTEMP
Reset release delay
VDD rising
-
1
1.7
ms
Reset generation delay
VDD falling
-
3
-
µs
VIT+
Power-on reset
threshold(2) (3)
2. If VDD is below 3 V, the code execution is guaranteed above the VIT- and VIT+ thresholds. RAM content is
kept. The EEPROM programming sequence must not be initiated.
3. There is inrush current into VDD present after device power on to charge CEXT capacitor. This inrush energy
depends from CEXT capacitor value. For example, a CEXT of 1μF requires Q=1 μF x 1.8V = 1.8 μC.
-
2.65
2.8
2.95
V
VIT-
Brown-out reset
threshold
-
2.58
2.73
2.88
VHYS(BOR)
Brown-out reset
hysteresis
--
70(1)
-mV



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