MAXIMUM RATINGS

All Ratings per die: T

C = 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

STATIC ELECTRICAL CHARACTERISTICS

• Ultra Low R

DS(ON)

• Low Miller Capacitance

• Ultra Low Gate Charge, Qg

• Avalanche Energy Rated

• Extreme dv/dt Rated

Super Junction MOSFET

C

Power Semiconductors

O

O LMOS

"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-

mark of Infineon Technologies AG."

G

D

S

Microsemi Website - http://www.microsemi.com

APT30N60BC6

APT30N60SC6

600V

30A

.125

Ω

Symbol

Parameter

APT30N60B_SC6

UNIT

V

DSS

Drain-Source Voltage

600

Volts

I

D

Continuous Drain Current @ T

C = 25°C

30

Amps

Continuous Drain Current @ T

C = 100°C

19

I

DM

Pulsed Drain Current 1

89

V

GS

Total Power Dissipation @ T

C = 25°C

±

20

Volts

P

D

Gate-Source Voltage Continuous

219

Watts

T

J,TSTG

Operating and Storage Junction Temperature Range

- 55 to 150

°C

T

L

Lead Temperature: 0.063" from Case for 10 Sec.

260

dv/dt

Drain-Source Voltage slope (VDS = 480V, ID = 30A, TJ = 125°C)

15

V/ns

I

AR

Avalanche Current 2

5.2

Amps

E

AR

Repetitive Avalanche Energy 2 ( Id = 5.2A, Vdd = 50V )

0.96

mJ

E

AS

Single Pulse Avalanche Energy

( Id = 5.2A, Vdd = 50V )

636

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BV

(DSS)

Drain-Source Breakdown Voltage (V

GS = 0V, ID = 250μA)

600

Volts

R

DS(on)

Drain-Source On-State Resistance 3 (V

GS = 10V, ID = 14.5A)

0.11

0.125

Ohms

I

DSS

Zero Gate Voltage Drain Current (V

DS = 600V, VGS = 0V)

25

μA

Zero Gate Voltage Drain Current (V

DS = 600V, VGS = 0V, TC = 150°C)

100

I

GSS

Gate-Source Leakage Current (V

GS = ±20V, VDS = 0V)

±100

nA

V

GS(th)

Gate Threshold Voltage (V

DS = VGS, ID = 960μA)

2.5

3

3.5

Volts

TO-247

D3PAK