DYNAMIC CHARACTERISTICS

APT30N60B_SC6

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

THERMAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction temperature

2 Repetitive avalanche causes additional power losses that can be calculated as

PAV = EAR*f . Pulse width tp limited by Tj max.

3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

4 See MIL-STD-750 Method 3471

5 Eon includes diode reverse recovery.

6 Maximum 125°C diode commutation speed = di/dt 600A/μs

0

0.10

0.20

0.30

0.40

0.50

0.60

10-5

10-4

10-3

10-2

0.1

1

10

0.3

D = 0.9

0.7

SINGLE PULSE

RECTANGULAR PULSE DURATION (SECONDS)

Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

0.5

0.1

0.05

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

t1/t

2

t2

t1

Note:

Symbol Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

C

iss

Input Capacitance

V

GS = 0V

V

DS = 25V

f = 1 MHz

2267

pF

C

oss

Output Capacitance

1990

C

rss

Reverse Transfer Capacitance

203

Q

g

Total Gate Charge 4

V

GS = 10V

V

DD = 300V

I

D = 30A @ 25°C

88

nC

Q

gs

Gate-Source Charge

12

Q

gd

Gate-Drain ("Miller") Charge

46

t

d(on)

Turn-on Delay Time

INDUCTIVE SWITCHING

V

GS = 15V

V

DD = 400V

I

D = 30A @ 25°C

R

G = 4.3Ω

9

ns

t

r

Rise Time

17

t

d(off)

Turn-off Delay Time

74

t

f

Fall Time

48

E

on

Turn-on Switching Energy 5

INDUCTIVE SWITCHING @ 25°C

V

DD = 400V, VGS = 15V

I

D = 30A, RG = 4.3Ω

409

μJ

E

off

Turn-off Switching Energy

224

E

on

Turn-on Switching Energy 5

INDUCTIVE SWITCHING @ 125°C

V

DD = 400V, VGS = 15V

I

D = 30A, RG = 4.3Ω

649

E

off

Turn-off Switching Energy

282

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

I

S

Continuous Source Current (Body Diode)

26

Amps

I

SM

Pulsed Source Current 1 (Body Diode)

65

V

SD

Diode Forward Voltage 3 (V

GS = 0V, IS = -30A)

1.30

Volts

dv

/

dt

Peak Diode Recovery dv/

dt

6

15

V/ns

t

rr

Reverse Recovery Time

(I

S = -30A,

di

/

dt = 100A/μs)

T

j = 25°C

661

ns

T

j = 125°C

813

Q

rr

Reverse Recovery Charge

(I

S = -30A,

di

/

dt = 100A/μs)

T

j = 25°C

15

μC

T

j = 125°C

18

I

RRM

Peak Recovery Current

(I

S = -30A,

di

/

dt = 100A/μs)

T

j = 25°C

46

Amps

T

j = 125°C

48

Symbol

Characteristic

MIN

TYP

MAX

UNIT

R

θJC

Junction to Case

0.52

°C/W

R

θJA

Junction to Ambient

31