1

IPZA65R018CFD7

Rev.2.0,2020-10-27

Final Data Sheet

1

2

3 4

tab

PG-TO247-4-3

Drain

Pin 1, Tab

Gate

Pin 4

Power

Source

Pin 2

Driver

Source

Pin 3

*1: Internal body diode

*1

MOSFET

650VCoolMOSªCFD7SJPowerDevice

Thelatest650VCoolMOS™CFD7extendsthevoltageclassofferingof

theCFD7familyandisasuccessortothe650VCoolMOS™CFD2.

Resultingfromimprovedswitchingperformanceandexcellentthermal

behavior,650VCooMOS™CFD7offershighestefficiencyinresonant

switchingtopologies,suchasLLCandphase-shift-full-bridge(ZVS).As

partofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblends

alladvantagesofafastswitchingtechnologytogetherwithsuperiorhard

commutationrobustness.TheCoolMOS™CFD7technologymeets

highestefficiencyandreliabilitystandardsandfurthermoresupportshigh

powerdensitysolutions.

Features

•Ultra-fastbodydiode

•650Vbreakdownvoltage

•Best-in-classRDS(on)

•Reducedswitchinglosses

•LowRDS(on)dependencyovertemperature

Benefits

•Excellenthardcommutationruggedness

•Extrasafetymarginfordesignswithincreasedbusvoltage

•Enablingincreasedpowerdensitysolutions

•OutstandinglightloadefficiencyinindustrialSMPSapplications

•ImprovedfullloadefficiencyinindustrialSMPSapplications

•PricecompetitivenessoverpreviousCoolMOS™families

Potentialapplications

SuitableforSoftSwitchingtopologies

Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,

Telecom,EVCharging,Solar

Productvalidation

FullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:Thesourceandsensesourcepinsarenotexchangeable.

Theirexchangemightleadtomalfunction.Forparalleling4pinMOSFET

devicestheplacementofthegateresistorisgenerallyrecommendedtobe

ontheDriverSourceinsteadoftheGate.

Table1KeyPerformanceParameters

Parameter

Value

Unit

VDS @ Tj,max

700

V

RDS(on),max

18

m

Ω

Qg,typ

234

nC

ID,pulse

495

A

Eoss @ 400V

31.6

µJ

Body diode diF/dt

1300

A/µs

Type/OrderingCode

Package

Marking

RelatedLinks

IPZA65R018CFD7

PG-TO247-4-3

65R018F7

see Appendix A