5

650VCoolMOSªCFD7SJPowerDevice

IPZA65R018CFD7

Rev.2.0,2020-10-27

Final Data Sheet

3Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Drain-source breakdown voltage

V(BR)DSS

650

-

-

V

VGS=0V,ID=1mA

Gate threshold voltage

V(GS)th

3.5

4

4.5

V

VDS=VGS,ID=2.91mA

Zero gate voltage drain current

1)

IDSS

-

-

-

44

1

88

µA

VDS=650V,VGS=0V,Tj=25°C

VDS=650V,VGS=0V,Tj=125°C

Gate-source leakage current

IGSS

-

-

100

nA

VGS=20V,VDS=0V

Drain-source on-state resistance

RDS(on)

-

-

0.015

0.033

0.018

-

Ω

VGS=10V,ID=58.2A,Tj=25°C

VGS=10V,ID=58.2A,Tj=150°C

Gate resistance

RG

-

2.7

-

Ω

f=1MHz,opendrain

Table5Dynamiccharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Input capacitance

Ciss

-

11660 -

pF

VGS=0V,VDS=400V,f=250kHz

Output capacitance

Coss

-

167

-

pF

VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energy

related

2)

Co(er)

-

396

-

pF

VGS=0V,VDS=0...400V

Effective output capacitance, time

related

3)

Co(tr)

-

4144

-

pF

ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time

td(on)

-

50

-

ns

VDD=400V,VGS=13V,ID=58.2A,

RG=1.8

Ω;seetable9

Rise time

tr

-

8

-

ns

VDD=400V,VGS=13V,ID=58.2A,

RG=1.8

Ω;seetable9

Turn-off delay time

td(off)

-

180

-

ns

VDD=400V,VGS=13V,ID=58.2A,

RG=1.8

Ω;seetable9

Fall time

tf

-

4

-

ns

VDD=400V,VGS=13V,ID=58.2A,

RG=1.8

Ω;seetable9

Table6Gatechargecharacteristics

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Gate to source charge

Qgs

-

67

-

nC

VDD=400V,ID=58.2A,VGS=0to10V

Gate to drain charge

Qgd

-

71

-

nC

VDD=400V,ID=58.2A,VGS=0to10V

Gate charge total

Qg

-

234

-

nC

VDD=400V,ID=58.2A,VGS=0to10V

Gate plateau voltage

Vplateau

-

5.8

-

V

VDD=400V,ID=58.2A,VGS=0to10V

1) Maximum specification is defined by calculated six sigma upper confidence bound

2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V

3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V