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STGW60H65F Folha de dados(PDF) 1 Page - STMicroelectronics

Nome de Peças STGW60H65F
Descrição Electrónicos  60 A, 650 V field stop trench gate IGBT
PDF  14 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGW60H65F Folha de dados(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
January 2013
Doc ID 019012 Rev 5
1/14
14
STGW60H65F
STGWT60H65F
60 A, 650 V field stop trench gate IGBT
Datasheet
− production data
Features
■ High speed switching
■ Tight parameter distribution
■ Safe paralleling
■ Low thermal resistance
■ 6 µs short-circuit withstand time
■ Lead free package
Applications
■ Photovoltaic inverters
■ Uninterruptible power supply
■ Welding
■ Power factor correction
■ High switching frequency converters
Description
Using advanced proprietary trench gate and field
stop structure, this IGBT leads to an optimized
compromise between conduction and switching
losses maximizing the efficiency for high
switching frequency converters. Furthermore, a
slightly positive VCE(sat) temperature coefficient
and a very tight parameter distribution result in an
easier paralleling operation.
Figure 1.
Internal schematic diagram
TO-247
1
2
3
TO-3P
1
2
3
Table 1.
Device summary
Order code
Marking
Package
Packaging
STGW60H65F
GW60H65F
TO-247
Tube
STGWT60H65F
G60H65F
TO-3P
Tube
www.st.com
Obsolete
Product(s)
- Obsolete
Product(s)


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