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STGW60H65F Folha de dados(PDF) 6 Page - STMicroelectronics |
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STGW60H65F Folha de dados(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Electrical characteristics STGW60H65F, STGWT60H65F 6/14 Doc ID 019012 Rev 5 Figure 8. Normalized VGE(th) vs. junction temperature Figure 9. Gate charge vs. gate-emitter voltage Figure 10. Capacitance variations (f = 1 MHz, VGE = 0) Figure 11. Switching losses vs. collector current Figure 12. Switching losses vs. gate resistance Figure 13. Switching losses vs. temperature AM11853v1 0.7 0.8 0.9 1.0 -50 -25 0 25 50 75 100 125 VGE(th) norm (V) TJ (ºC) I C = 1 mA AM11854v1 0 2 4 6 8 10 12 14 16 0 50 100 150 200 VGE (V) Qg (nC) AM11855v1 10 100 1000 10000 0.1 1 10 C (pF) VCE (V) Cres Coes Cies AM11856v1 0 500 1000 1500 2000 2500 20 40 60 80 100 E (μJ) IC (A) TJ= 25°C TJ= 125°C ---- VCC= 400V, VGE = 15V, RG = 10Ω EON EOFF AM11857v1 250 750 1250 1750 2250 2750 3250 0 10203040 E (μJ) RG (Ω) EON EOFF VCC= 400V, VGE = 15V, IC= 60 A, TJ = 125°C AM11858v1 400 600 800 1000 1200 1400 25 50 75 100 125 E (μJ) TJ (°C) VCC= 400V, VGE = 15V, IC= 60 A, RG = 10Ω EON EOFF Obsolete Product(s) - Obsolete Product(s) |
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