0.1-10.0 GHz Low Noise, Medium Power

pHEMT in a Surface Mount Plastic Package

Page 2 of 17

CFS0303-SB

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2006 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

May 2006 - Rev 23-May-06

Electrical Characteristics

Ta=25ºC, Typical device RF parameters measured in test system.

Parameters

Test Conditions

Min

Typ

Max

Units

Saturated Drain Current1

Vds=1.5V, Vgs=0V

120

165

200

mA

Pinch-off Voltage 1

Vds=1.5V, Ids=10% of Idss

-0.8

-0.65

-0.5

V

No RF, Quiescent Bias Current

Vgs=0.45V, Vds=2V

60

mA

Transconductance1

Vds=2.5V. Gm=Idss/Vp

190

250

mmho

Gate to Drain Leakage Current

Vgd = 5

250

µA

Gate Leakage Current

Vgd=Vgs= -4V

10

150

µA

Noise Figure

f=1000MHz

Vds=2V, Ids=10mA

0.3

dB

Vds=2V, Ids=20mA

0.35

dB

Vds=3V, Ids=20mA

0.3

0.7

dB

Vds=3V, Ids=60mA

0.18

0.53

dB

f=2GHz

Vds=2V, Ids=10mA

0.4

dB

Vds=2V, Ids=20mA

0.37

dB

Vds=3V, Ids=20mA

0.4

0.8

dB

Vds=3V, Ids=60mA

0.26

0.61

dB

Associated Gain 2

f=1000MHz

Vds=2V, Ids=10mA

19.7

dB

Vds=2V, Ids=20mA

20.8

dB

Vds=3V, Ids=20mA

21.1

dB

Vds=3V, Ids=60mA

22.4

dB

f=2GHz

Vds=2V, Ids=10mA

13.1

14.6

16.1

dB

Vds=2V, Ids=20mA

15.5

dB

Vds=3V, Ids=20mA

15.7

dB

Vds=3V, Ids=60mA

15.3

16.8

18.3

dB

Output Third Order Intercept Point

f=1000MHz

Vds=2V, Ids=10mA

22.5

dBm

Vds=2V, Ids=20mA

24.5

dBm

Vds=3V, Ids=20mA

24.0

26.5

dBm

Vds=3V, Ids=60mA

32.0

dBm

f=2GHz

Vds=2V, Ids=10mA

23.0

dBm

Vds=2V, Ids=20mA

25.5

dBm

Vds=3V, Ids=20mA

24.5

27.0

dBm

Vds=3V, Ids=60mA

32.5

dBm

1 dB Gain Compression Point 2

f=1000MHz

Vds=2V, Ids=10mA

12.5

dBm

Vds=2V, Ids=20mA

12.5

dBm

Vds=3V, Ids=20mA

14.0

16.0

dBm

Vds=3V, Ids=60mA

17.0

dBm

f=2GHz

Vds=2V, Ids=10mA

12.5

dBm

Vds=2V, Ids=20mA

12.5

dBm

Vds=3V, Ids=20mA

14.0

16.0

dBm

Vds=3V, Ids=60mA

17.0

dBm

Notes:

1. Guaranteed at wafer probe.

2. Measurements obtained at fixed tuned system.

Absolute Maximum Ratings

1

Parameter

Rating

Parameter

Rating

Parameter

Rating

Drain-Source Voltage 2

+5.5 V

Drain Current 2

Idss 3 A

Channel Temperature

+175ºC

Gate-Source Voltage 2

-5.0 V

Total Pwr Dissipation

560 mW

Storage Temperature

-65ºC to +160ºC

Gate-Drain Voltage 2

-5.0 V

RF Input Power

17 dBm

Thermal Resistance

98ºC/W

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage

2. Assumes DC quiescent conditions. RF OFF.

3. Vgs=0V