STPS1H100 datasheet(3/15 Pages) STMICROELECTRONICS

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1.1

Characteristics (curves)

Figure 1. Average forward power dissipation versus

average forward current

(W)

F(AV)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

=tp/T

(A)

F(AV)

= 1

= 0.1

= 0.05

= 0.5

= 0.2

Figure 2. Average forward current versus ambient

temperature (δ = 0.5)

(A)

F(AV)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

5 0

7 5

100

125

150

175

Rth(j-a)=Rth(j-l)

δ=tp/T

Rth(j-a)=100°C/W

Rth(j-a)=120°C/W

SMA

SMB / SMA Flat

Rth(j-a)=200°C/W

(°C)

amb

Figure 3. Normalized avalanche power derating versus

junction temperature (Tj = 125 °C)

(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Figure 4. Junction capacitance versus reverse voltage

applied (maximum values)

C(pF)

100

1 0

100

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

V (V)

Figure 5. Relative variation of thermal impedance junction

to ambient versus pulse duration

/ R

th(j-a)

0.01

0.10

1.00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SMB

t (s)

Figure 6. Relative variation of thermal impedance junction

to ambient versus pulse duration

/ R

th(j-a)

0.01

0.10

1.00

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Single pulse

SMA

t (s)

STPS1H100

Characteristics (curves)

DS1228 - Rev 8

page 3/15

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