STPS1H100 datasheet(2/15 Pages) STMICROELECTRONICS

2 / 15 page

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

100

IF(RMS)

Forward rms current

IF(AV)

Average forward current, δ = 0.5

SMA

TL = 150 °C

SMB, SMA Flat

TL = 155 °C

SMA Flat Notch

TL = 160 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

PARM

Repetitive peak avalanche power

tp = 10 µs, Tj = 125 °C

108

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature(1)

+175

°C

1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 2. Thermal parameters

Symbol

Parameter

Max. value

Unit

Rth(j-l)

Junction to lead

SMA

°C/W

SMB

SMA Flat, SMA Flat Notch

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 125 °C

0.2

0.5

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 1 A

0.77

Tj = 125 °C

0.58

0.62

Tj = 25 °C

IF = 2 A

0.86

Tj = 125 °C

0.65

0.70

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.54 x IF(AV) + 0.08 x IF2(RMS)

STPS1H100

Characteristics

DS1228 - Rev 8

page 2/15

STPS1H100 Folha de dados(PDF) 2 Page - STMicroelectronics

STPS1H100 Folha de dados(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Folha de dados Download

Ligação URL