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STM32G030C6 Folha de dados(PDF) 13 Page - STMicroelectronics |
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STM32G030C6 Folha de dados(HTML) 13 Page - STMicroelectronics |
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13 / 94 page ![]() DS12991 Rev 4 13/94 STM32G030x6/x8 Functional overview 28 Flexible protections can be configured thanks to option bytes: • Readout protection (RDP) to protect the whole memory. Three levels are available: – Level 0: no readout protection – Level 1: memory readout protection: the Flash memory cannot be read from or written to if either debug features are connected, boot in RAM or bootloader is selected – Level 2: chip readout protection: debug features (Cortex-M0+ serial wire), boot in RAM and bootloader selection are disabled. This selection is irreversible. • Write protection (WRP): the protected area is protected against erasing and programming. Two areas per bank can be selected, with 2-Kbyte granularity. The whole non-volatile memory embeds the error correction code (ECC) feature supporting: • single error detection and correction • double error detection • readout of the ECC fail address from the ECC register 3.4 Embedded SRAM STM32G030x6/x8 devices have 8 Kbytes of embedded SRAM with parity. Hardware parity check allows memory data errors to be detected, which contributes to increasing functional safety of applications. The memory can be read/write-accessed at CPU clock speed, with 0 wait states. Table 3. Access status versus readout protection level and execution modes Area Protection level User execution Debug, boot from RAM or boot from system memory (loader) Read Write Erase Read Write Erase User memory 1 Yes Yes Yes No No No 2 Yes Yes Yes N/A N/A N/A System memory 1 Yes No No Yes No No 2 Yes No No N/A N/A N/A Option bytes 1 Yes Yes Yes Yes Yes Yes 2 Yes No No N/A N/A N/A Backup registers 1Yes Yes N/A(1) 1. Erased upon RDP change from Level 1 to Level 0. No No N/A(1) 2 Yes Yes N/A N/A N/A N/A |
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