DLPA2000 datasheet(10/63 Pages) TI

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Table 5-10. Power and Ground (continued)

I/O

TYPE

DESCRIPTION

NAME

NO.

VSS

C4, D6, D8,

D10, E4,

E13, F4, G4,

G12, H4,

H12, J3,

J13, K4,

K12, L3, M4,

M5, M8,

M12, G13,

C6, C8

—

GND

Core ground (eDRAM, DSI, I/O ground, thermal ground)

VCC18

C7, C9, D4,

E12, F12,

K13, M11

—

PWR

All 1.8-V I/O power:

(1.8-V power supply for all I/O pins except the host or parallel interface

and the SPI flash interface. This includes RESETZ, PARKZ, LED_SEL,

CMP_OUT, GPIO, IIC1, TSTPT, and JTAG pins)

VCC_INTF

M3, M7, N3,

—

PWR

Host or parallel interface I/O power: 1.8 V to 3.3 V (Includes IIC0, PDATA,

video syncs, and HOST_IRQ pins)

VCC_FLSH

D11

—

PWR

Flash interface I/O power: 1.8 V to 3.3 V

(Dedicated SPI0 power pin)

VDD_PLLM

—

PWR

MCG PLL (primary clock generator phase lock loop) 1.1-V power

VSS_PLLM

—

RTN

MCG PLL return

VDD_PLLD

—

PWR

DCG PLL (DMD clock generator phase lock loop) 1.1-V power

VSS_PLLD

—

RTN

DCG PLL return

Table 5-11. I/O Type Subscript Definition

I/O

SUPPLY REFERENCE

ESD STRUCTURE

SUBSCRIPT

DESCRIPTION

1.8-V LVCMOS I/O buffer with 8-mA drive

Vcc18

ESD diode to GND and supply rail

1.8-V LVCMOS I/O buffer with 4-mA drive

Vcc18

ESD diode to GND and supply rail

1.8-V LVCMOS I/O buffer with 24-mA drive

Vcc18

ESD diode to GND and supply rail

1.8-V sub-LVDS output with 4-mA drive

Vcc18

ESD diode to GND and supply rail

1.8-V, 2.5-V, 3.3-V LVCMOS with 4-mA drive

Vcc_INTF

ESD diode to GND and supply rail

1.8-V LVCMOS input

Vcc18

ESD diode to GND and supply rail

1.8-V, 2.5-V, 3.3-V I2C with 3-mA drive

Vcc_INTF

ESD diode to GND and supply rail

1.8-V I2C with 3-mA drive

Vcc18

ESD diode to GND and supply rail

1.8-V, 2.5-V, 3.3-V LVCMOS with 8-mA drive

Vcc_INTF

ESD diode to GND and supply rail

DSI LVDS I/O

VDD for high speed

transmit, high speed

receive, and low power

receive.

VDDLP12 for low power

transmit

ESD diode to GND and supply rail

1.8-V, 2.5-V, 3.3-V LVCMOS input

Vcc_INTF

ESD diode to GND and supply rail

1.8-V, 2.5-V, 3.3-V LVCMOS input

Vcc_FLSH

ESD diode to GND and supply rail

1.8-V, 2.5-V, 3.3-V LVCMOS with 8-mA drive

Vcc_FLSH

ESD diode to GND and supply rail

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