600F1R5BT250XT datasheet(4/15 Pages) NXP

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RF Device Data

NXP Semiconductors

A3I25X050N A3I25X050GN

Table 5. Electrical Characteristics (TA =25C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Functional Tests (1,2) (In NXP Production Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) =3.55 Vdc,

Pout = 5.6 W Avg., f = 2590 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on

CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5MHz Offset.

Power Gain

Gps

28.0

28.8

33.0

Power Added Efficiency

PAE

38.0

39.5

—

Adjacent Channel Power Ratio

ACPR

—

–35.6

–32.5

dBc

Pout @ 3 dB Compression Point, CW

P3dB

42.7

48.6

—

Wideband Ruggedness (In NXP Characterization Test Fixture, 50 ohm system) IDQ(Carrier) = 130 mA, VGS(Peaking) = 3.75 Vdc, f = 2600 MHz,

Additive WhiteGaussian Noise(AWGN)with10dBPAR

ISBW of 400 MHz at 32 Vdc, 17.4 W Avg. Modulated Output Power

(3 dB Input Overdrive from 9 W Avg. Modulated Output Power)

No Device Degradation

Typical Performance (In NXP Characterization Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ(Carrier) = 130 mA, VGS(Peaking) =3.75 Vdc,

2496–2690 MHz Bandwidth

Pout @ 3 dB Compression Point (3)

P3dB

—

55.0

—

AM/PM

(Maximum value measured at the P3dB compression point across

the 2496–2690 MHz frequency range.)



—

–12.5

—



VBW Resonance Point

(IMD Third Order Intermodulation Inflection Point)

VBWres

—

180

—

MHz

Quiescent Current Accuracy over Temperature (4)

with 3.6 k Gate Feed Resistors (–30 to 85C) Stage 1+2 (Carrier)

IQT

—

6.5

—

Gain Flatness in 194 MHz Bandwidth @ Pout =5.6 W Avg.

—

0.3

—

Gain Variation over Temperature

(–40Cto+85C)

G

—

0.031

—

dB/C

Output Power Variation over Temperature

(–40Cto+85C)

P3dB

—

0.018

—

dB/C

Table 6. Ordering Information

Device

Tape and Reel Information

Package

A3I25X050NR1

R1 Suffix = 500 Units, 32 mm Tape Width, 13--inch Reel

OM--400--8

A3I25X050GNR1

OM--400G--8

1. Part internally input and output matched.

2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull

wing (GN) parts.

3. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W--CDMA single--carrier input signal

where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

4. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family, and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.nxp.com/RF and search for AN1977 or AN1987.

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