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TSB711 Folha de dados(PDF) 9 Page - STMicroelectronics

Nome de Peças TSB711
Descrição Electrónicos  Precision rail-to-rail input / output 36 V, 6 MHz op-amps
PDF  36 Pages
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TSB711 Folha de dados(HTML) 9 Page - STMicroelectronics

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
CMR
Common-mode rejection ratio
20 log ( ∆VINCM / ∆VIO )
T = 25 °C
dB
TSB711, TSB712 (VCC-) ≤ VICM ≤ (VCC+),
-40 °C < T < 125 °C
70
VOH
High level output voltage (drop
voltage from VCC+)
No load, -40 °C < T < 125 °C
90
mV
ISOURCE = 2 mA, -40 °C < T < 125 °C
200
VOL
Low level output voltage
No load, -40 °C < T < 125 °C
90
ISINK = 2 mA, -40 °C < T < 125 °C
200
IOUT
ISINK
VOUT = VCC, T = 25 °C
20
50
mA
VOUT = VCC, -40 °C < T < 125 °C
15
ISOURCE
VOUT = 0 V, T = 25 °C
20
50
VOUT = 0 V, -40 °C < T < 125 °C
15
ICC
Supply current by op-amp
No load, T = 25 °C
1.4
mA
No load, -40 °C < T < 125 °C
2.3
AC performance
GBP
Gain bandwidth product
RL = 10 kΩ, CL = 100 pF
4.5
6
MHz
SR
Slew rate
3 V step, RL = 10 kΩ, CL = 100 pF,
AV = 1 V/V, 10% to 90%
2
2.7
V / µs
THD+N
Total harmonic distorsion + noise
VIN = 1 Vrms , RL = 10 kΩ, AV = +1,
f = 1 kHz, BW = 22 kHz
0,00032
%
VIN = 1 Vrms , RL = 1 kΩ, AV = +1,
f = 1 kHz, BW = 22 kHz
0,0004
Φm
Phase margin
At unity gain, 25 °C, 10 kΩ, 100 pF
34
ᵒ
CLOAD
Capacitive load drive
100(4)
pF
en
Input voltage noise density
f = 10 Hz
20
nV / √Hz
f = 100 Hz
13
f = 10 kHz
12
en p-p
Input noise voltage
0.1 Hz ≤ f ≤ 10 Hz
0.8
µVPP
in
Input current noise density
f = 1 kHz
0.15 (5)
pA / √Hz
1. See Section 5.4 Input offset voltage drift over the temperature in application information.
2. Current is positive when it is sinked into the op-amp.
3. Iio is defined as |Iibp – Iibn|.
4. For higher capacitive values see Figure 25. Phase margin vs. output current at VCC = 5 V, Figure 27. Phase margin vs.
capacitive load
5. Theoretical value of the input current noise density based on the measurement of the input transistor base current:
in= 2.q.ib
TSB711, TSB711A, TSB712, TSB712A, TSB714, TSB714A
Electrical characteristics
DS12487 - Rev 6
page 9/36



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