UCD3138064RMHT datasheet(16/104 Pages) TI

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V33A = V33D = V33DIO = 3.3 V; 1μF from BP18 to DGND, TJ = –40 °C to 125 °C (unless otherwise noted)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

DNL(5)

0.06

0.12

LSB

Offset

–5.5

19.5

Reference DAC buffered output load(7)

–0.5

Buffer offset (–0.5 mA)

4.6

8.3

Buffer offset (1.0 mA)

–0.05

Output Range (–0.5 mA)

0.2

2.5

Output Range (1.0 mA)

2.5

(1)

DPWM outputs are low after reset. Other GPIO pins are configured as inputs after reset.

(2)

On the 40 pin package V33DIO is connected to V33D internally.

(3)

The maximum total current, IOHmax and IOLmax for all outputs combined, should not exceed 12 mA to hold the maximum voltage

drop specified. Maximum sink current per pin = –6 mA at VOL; maximum source current per pin = 6 mA at VOH.

(4)

Time from close of error ADC sample window to time when digitally calculated control effort (duty cycle) is available. This delay, which

has no variation associated with it, must be accounted for when calculating the system dynamic response.

(5)

Characterized by design and not production tested.

(6)

Ambient temperature offset value should be used from the TEMPSENCTRL register to meet accuracy.

(7)

Available from reference DACs for comparators D, E, F and G.

8.6 Timing Characteristics

V33A = V33D = V33DIO = 3.3 V; 1 μF from BP18 to DGND, TJ = –40 to 125 °C (unless otherwise noted)

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

EADC DAC

Settling Time

From 10 to 90%

250

ADC12

ADC single sample conversion time(1)

ADC_SAMPLING_SEL= 6 or 0

3.9

μs

SYSTEM PERFORMANCE

tWD

Watchdog time out resolution

Total time is: tWD x (WDCTRL.PERIOD+1)

14.6

20.5

Time to disable DPWM output based on

active FAULT pin signal

High level on FAULT pin

Retention period of flash content (data

retention and program)

TJ = 25 °C

100

years

Program time to erase one page or block

in data flash or program flash

Program time to write one word in data

flash or program flash

µs

Sync-in/sync-out pulse width

Sync pin

256

Flash Write

μs

POWER ON RESET AND BROWN OUT (V33D PIN, SEE Figure 8-3)

tPOR

Time delay after Power is good or RESET*

relinquished

tEXC1

The time it takes from the device to exit

a reset state and begin executing program

flash bank 1 (32 kB).(1)

IRESET goes from a low state to a high state.

This is approximately equivalent to toggling the

external reset pin from low to high state.

9.5

tEXC2

The time it takes from the device to exit

a reset state and begin executing program

flash bank 2 (32 kB).(1)

IRESET goes from a low state to a high state.

This is approximately equivalent to toggling the

external reset pin from low to high state.

tEXCT

The time it takes from the device to exit

a reset state and begin executing the total

program flash (64 kB).(1)

IRESET goes from a low state to a high state.

This is approximately equivalent to toggling the

external reset pin from low to high state.

TEMPERATURE SENSOR(1)

tON

Turn on time / settling time of sensor

100

μs

UCD3138064

SLUSB72D – MARCH 2013 – REVISED APRIL 2021

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