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SWF4N65 Folha de dados(PDF) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

Nome de Peças SWF4N65
Descrição Electrónicos  N-Channel MOSFET uses advanced trench technology
PDF  5 Pages
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Fabricante Electrônico  DOINGTER [SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.]
Página de início  http://www.doingter.cn/
Logo DOINGTER - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

SWF4N65 Folha de dados(HTML) 2 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

  SWF4N65 Datasheet HTML 1Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWF4N65 Datasheet HTML 2Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWF4N65 Datasheet HTML 3Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWF4N65 Datasheet HTML 4Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. SWF4N65 Datasheet HTML 5Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.  
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—
2 —
Symbol
Parameter
Max
Units
RƟJC
Thermal Resistance,Junction to Case
5.1
℃/W
RƟJA
Thermal Resistance,Junction to Ambient
45.3
Electrical Characteristics：(T
C=25℃ unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VGS=0V,ID=250μA
650
---
V
IDSS
Zero Gate Voltage Drain Current
VGS=0V, VDS=650V
---
---
1
μA
IGSS
Gate-Source Leakage Current
VGS=±30V, VDS=0A
---
---
±100
nA
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
VGS=VDS, ID=250μA
2
---
4
V
RDS(ON)
Drain-Source On Resistance
VGS=10V,ID=2.5A
---
2.3
2.7
Ω
GFS
Forward Transconductance
VDS=40V, ID=2.5A
---
3.8
---
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS=25V, VGS=0V, f=1MHz
---
415
---
pF
Coss
Output Capacitance
---
58
---
Crss
Reverse Transfer Capacitance
---
1.4
---
Switching Characteristics
td(on)
Turn-On Delay Time
VDD=325V, ID=5A,
RGEN=25Ω.
---
7
---
ns
tr
Rise Time
---
22
---
ns
td(off)
Turn-Off Delay Time
---
15
---
ns
tf
Fall Time
---
23
---
ns
Qg
Total Gate Charge
VGS=10V, VDS=520V,
ID=45A
---
13
---
nC
Qgs
Gate-Source
Charge
---
4.9
---
nC
---
SWF4N65



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